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Excelics
DATA SHEET
Features * NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE * +26dBm TYPICAL OUTPUT POWER * 9.0dB TYPICAL POWER GAIN AT 12 GHZ * 0.4 dB TYPICAL NOISE FIGURE AT 2GHz * 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz * 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE * Si3N4 PASSIVATION * ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
EPA060B-70
High Efficiency Heterojunction Power FET
'
0LQ $OO /HDGV
6
6 *
Applications * High Dynamic Range LNA * DC to 18 GHz
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE IP3 NF GA Idss Gm Vp BVgd BVgs PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Gain at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Power Added Efficiency at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz +5dBm POUT/Tone (5V/50mA) f=2GHz (5V/90mA) Noise Figure (5V/50mA) f=2GHz (5V/90mA) Associated Gain (5V/50mA) f=2GHz (5V/90mA) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA -10 -6 MIN 24.0 17.0 7.0 TYP 26.0 25.5 19.0 9.0 55 45 28 31 0.4 0.6 20.0 20.0 180 190 -1.0 -15 -14 175
* o
MAX
UNIT dBm dB % dBm dB dB
110 120
250
mA mS
-2.5
V V V C/W
Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA
Thermal Resistance Rth * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature ABSOLUTE1 10V -6V Idss 30mA 23dBm 175oC -65/175 C
o
CONTINUOUS2 6V -3V 110mA 5mA @ 3dB Compression 150 oC -65/150 oC 650mW
Total Power Dissipation 780mW Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA060B-70
DATA SHEET
High Efficiency Heterojunction Power FET
Typical Performance Noise Figure &IP3 EPA060B-70 @5V, 2GHz
(POUT/Tone = 5dBm)
0.8 NF [dB] 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ids [mA] 40 IP3 [dBm] 30 20 10 0
NF IP3
S-PARAMETERS
6V, 1/2 Idss
FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG 0.863 0.696 0.604 0.555 0.538 0.534 0.533 0.540 0.582 0.622 0.642 0.674 0.727 0.764 0.776 0.790 0.781 0.792 0.811 0.836 0.800 0.761 0.800 0.799 0.719 0.718 ANG -58.2 -101.1 -132.0 -159.5 177.3 160.5 141.8 125.9 105.0 88.1 74.5 60.3 47.7 36.4 22.6 8.5 -1.1 -9.8 -22.2 -32.5 -41.8 -54.5 -68.3 -80.2 -98.1 -119.4 --- S21 --MAG 12.375 9.063 6.850 5.508 4.614 4.002 3.532 3.168 2.817 2.532 2.370 2.195 1.970 1.758 1.618 1.441 1.285 1.221 1.106 1.016 0.975 0.941 0.861 0.764 0.751 0.750 ANG 135.5 104.4 82.3 63.6 47.0 31.8 16.7 2.3 -12.9 -28.1 -43.9 -60.1 -74.8 -88.3 -104.8 -122.5 -135.3 -147.7 -163.8 -179.0 166.9 152.3 134.7 117.1 103.1 85.7 --- S12 --MAG 0.026 0.039 0.049 0.055 0.065 0.074 0.083 0.092 0.101 0.108 0.119 0.129 0.132 0.133 0.137 0.134 0.133 0.144 0.142 0.144 0.157 0.176 0.190 0.204 0.239 0.291 ANG 63.8 49.7 43.5 39.1 35.5 30.5 25.3 19.2 11.6 2.7 -8.1 -19.3 -30.2 -40.6 -54.2 -69.5 -78.3 -91.0 -106.2 -121.0 -134.6 -148.9 -167.5 173.5 157.7 137.6 --- S22 --MAG 0.523 0.433 0.388 0.360 0.322 0.288 0.281 0.254 0.235 0.220 0.225 0.238 0.244 0.263 0.316 0.358 0.363 0.396 0.418 0.445 0.461 0.426 0.399 0.417 0.451 0.450 ANG -24.4 -41.0 -51.9 -60.8 -70.3 -84.5 -98.4 -111.5 -125.6 -148.1 -176.6 155.7 130.0 110.6 90.1 66.2 51.0 41.9 23.9 6.7 -8.4 -22.5 -50.3 -78.5 -87.9 -110.4
EPA060B-70
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS 5V,50ma
FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.948 0.739 0.656 0.619 0.597 0.577 0.580 0.616 0.618 0.633 0.673 0.718 0.761 0.777 0.779 0.816 0.827 0.822 0.852 0.868 0.846 0.838 0.860 0.835 0.819 0.868 -57.7 -100.4 -132.4 -155.0 -176.9 162.1 141.7 122.1 117.3 99.5 76.6 63.1 59.0 44.3 30.7 14.8 11.9 2.7 -9.8 -19.9 -31.4 -32.7 -47.9 -66.2 -80.1 -78.4 --- S21 --MAG ANG 14.366 9.162 7.008 5.629 4.740 4.086 3.546 3.145 2.918 2.657 2.345 2.142 1.999 1.767 1.543 1.418 1.307 1.114 1.090 1.001 0.911 0.856 0.832 0.763 0.710 0.699 129.2 106.8 84.9 67.5 51.0 35.5 21.4 6.6 -7.4 -22.4 -36.9 -50.5 -65.3 -81.5 -91.8 -107.4 -123.3 -132.8 -144.6 -158.4 -174.9 176.8 160.7 141.8 126.8 111.8 --- S12 --MAG ANG 0.032 0.042 0.050 0.056 0.062 0.069 0.075 0.081 0.088 0.097 0.101 0.108 0.117 0.118 0.115 0.117 0.121 0.114 0.123 0.122 0.120 0.125 0.130 0.128 0.130 0.145 54.0 45.1 36.7 31.8 26.9 22.1 18.2 11.3 4.0 -1.1 -10.0 -18.0 -27.9 -40.9 -46.4 -59.0 -70.7 -77.5 -87.1 -99.4 -114.7 -121.6 -137.4 -156.0 -170.6 174.2 --- S22 --MAG ANG 0.439 0.438 0.392 0.352 0.298 0.284 0.287 0.264 0.148 0.185 0.208 0.156 0.223 0.321 0.287 0.265 0.445 0.460 0.424 0.442 0.576 0.515 0.446 0.536 0.536 0.383 -48.4 -44.9 -56.7 -64.7 -74.4 -90.6 -96.4 -103.5 -131.4 -169.4 -168.3 179.2 117.8 97.0 96.4 77.7 49.2 49.8 38.2 21.5 9.4 9.9 -22.9 -40.8 -41.4 -78.0
EPA060B-70 Noise Parameters
Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 26 Vds=5V, Ids=50mA Gamma Opt Nfmin (MAG) (ANG) (dB) 0.46 44 0.45 0.35 96 0.55 0.23 165 0.75 0.27 -145 0.92 0.35 -85 1.37 0.46 -58 1.47 0.58 -33 1.92 0.68 -6 2.47 0.63 7 3.03 0.68 33 3.24 0.63 50 3.43 0.67 92 3.65 0.72 120 3.86 Rn/50 0.11 0.08 0.06 0.08 0.23 0.44 0.89 1.3 1.78 1.87 1.81 1.56 1.16

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